? 2002 ixys all rights reserved s g s d minibloc, sot-227 b (ixfn) e153432 to-264 aa (ixfk) features ? international standard packages ? encapsulating epoxy meets ul 94 v-0, flammability classification ? minibloc with aluminium nitride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls advantages ? easy to mount ? space savings ? high power density g = gate d = drain s = source tab = drain either source terminal at minibloc can be used as main or kelvin source s g d d (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 8ma 2.5 4.5 v i gss v gs = 20v; v ds = 0v 200 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 55n50 80 m ? note 1 50n50 100 m ? 97502f (04/02) hiperfet tm power mosfet single die mosfet symbol test conditions maximum ratings ixfk ixfk ixfn ixfn 55n50 50n50 55n50 50n50 v dss t j = 25c to 150c 500 500 v v dgr t j = 25c to 150c 500 500 v v gs continuous 20 2 0 v v gsm transient 30 30 v i d25 t c = 25 c 55 50 55 50 a i dm t c =25 c, 220 200 220 200 a i ar t c = 25 c 55 50 55 50 a e ar t c = 25 c60 60mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 560 600 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 n/a c v isol 50/60 hz, rms t = 1 min n/a 2500 v~ i isol 1 ma t = 1 s n/a 3000 v~ m d mounting torque 0.9/6 1.5/13 nm/lb.in. terminal connection torque n/a 1.5/13 nm/lb.in. weight 10 30 g v dss i d25 r ds(on) t rr ixfn 55n50 500v 55a 80m ? 250ns ixfn 50n50 500v 50a 100m ? 250ns ixfk 55n50 500v 55a 80m ? 250ns ixfk 50n50 500v 50a 100m ? 250ns preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 note 1 45 s c iss 9400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1280 pf c rss 460 pf t d(on) 45 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 60 ns t d(off) r g = 1 ? (external), 120 n s t f 45 ns q g(on) 330 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 55 nc q gd 155 nc r thjc to-264 aa 0.22 k/w r thck to-264 aa 0.15 k/w r thjc minibloc, sot-227 b 0.21 k/w r thck minibloc, sot-227 b 0.05 k/w source-drain diode (t j = 25 c, unless otherwise specified) characteristic values symbol test conditions min. typ. max. i s v gs = 0 55n50 55 a 50n50 50 a i sm repetitive; 55n50 220 a pulse width limited by t jm 50n50 200 a v sd i f = 100 a, v gs = 0 v note 1 1.5 v t rr 250 ns q rm i f = 25 a, -di/dt = 100 a/ s, v r = 100 v 1.0 c i rm 10 a m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 minibloc, sot-227 b millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-264 aa outline notes: 1. pulse test, t 300 s, duty cycle d 2 % ixfk50n50 ixfk55n50 IXFN50N50 ixfn55n50
? 2002 ixys all rights reserved t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 10 20 30 40 50 60 t j - degrees c 25 50 75 100 125 15 0 r ds(on) - normalized 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v gs - volts 3.0 3.5 4.0 4.5 5.0 5.5 6.0 i d - amperes 0 20 40 60 80 100 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 10 20 30 40 50 60 i d - amperes 0 20 40 60 80 100 120 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 v ds - volts 0 4 8 12 16 20 24 i d - amperes 0 20 40 60 80 100 v ds - volts 0 4 8 12162024 i d - amperes 0 20 40 60 80 100 120 140 5v v gs = 10v v gs = 10v 9v 8v 7v t j = 125 o c v gs = 10v t j = 25 o c 6v 6v 5v t j = 25 o c i d = 55a t j = 125 o c t j = 125 o c v gs = 10v 9v 8v 7v i d = 27.5a i d - amperes 0 20 40 60 80 100 120 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 v gs = 10v v gs = 10v t j = 25 o c t j = 25 o c t j = 125 o c ixf_55n50 ixf_50n50 t j = 25 o c figure 1. output characteristics at 25 o c figure 2. output characteristics at 125 o c figure 3. r ds(on) normalized to 0.5 i d25 value vs. i d figure 4. r ds(on) normalized to 0.5 i d25 value vs. t j figure 5. drain current vs. case temperature figure 6. admittance curves ixfk50n50 ixfk55n50 IXFN50N50 ixfn55n50
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 figure 7. gate charge figure 8. capacitance curves figure 9. forward voltage drop of the intrinsic diode figure 10. transient thermal resistance ixfk50n50 ixfk55n50 IXFN50N50 ixfn55n50 gate charge - nc 0 50 100 150 200 250 300 350 v gs - volts 0 2 4 6 8 10 12 v ds = 250v i d = 27.5a v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 100 1000 10000 crss coss ciss f = 1mhz v sd - volts 0.2 0.4 0.6 0.8 1.0 i d - amperes 0 20 40 60 80 100 t j = 125 o c t j = 25 o c pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.00 0.01 0.10 1.00
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